Photoluminescence from GaAs, ZnGeP2 and ZnSiAs2 dissertation [presented for the] M.Sc. Degree in Applied Solid StatePhysics. by Paul Bristoll

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Published by Brighton College of Technology, Department of Applied Physics in Brighton .

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ContributionsBrighton College of Technology. Department of Applied Physics.
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Photoluminescence spectra of high purity epitaxial GaAs: (a) MOCVD; (b) MBE with donors previously identi- fied as Si and S. from it to the lowest energy feature in the is region, labeled a, corresponds exactly to the FIRPC measured energy.

This has been confirmed using the sample shown in fig. 2b for which FIRPC data have been published [6].Cited by: 7. The photoluminescence of Si-doped GaAs grown by molecular beam epitaxy on non-() oriented surfaces will be presented and reviewed.

Particular care will be paid to show how photoluminescence can help the understanding of the behaviour of the dopants, unwanted impurities and point defects in differently oriented by: 6.

Zn-doped GaAs epitaxial layers grown by low pressure metal organic chemical vapor deposition technique in the hole concentration range 1×10 17 to ×10 20 cm −3 have been investigated by low temperature photoluminescence as a function of hole concentration and PL measurement temperatures, between and K.

From the PL spectra we have Cited by: Thin epitaxial GaAs films, with thickness varying from to nm and different Si doping levels, were grown at °C by organometallic vapor phase epitaxy (OMVPE) on Ge substrates and analyzed by low-temperature photoluminescence (PL) spectroscopy.

All spectra of thin GaAs on Ge show two different structures, one narrow band-to-band (B2B). Photoluminescence from the 2DEG in AlGaAs/GaAs heterojunctions has been investigated under high electric fields and reverse gate voltage. Under the reverse gate voltage, PL intensities of the (D 0, X) line, and HB1 and HB2 emissions are considerably suppressed due to controlled decrease of the Fermi space transfer of the 2DEG from the heterojunction to the Cited by: 2.

The power-dependence and temperature-dependence photoluminescence (PL) spectra have been studied. The bright room-temperature PL suggests a good luminescence quality of GaSb QDs/GaAs matrix system. The type-II alignment of the GaSb QDs/GaAs matrix system is verified by the blue-shift of the QDs peak with the increase of excitation power.

Photoluminescence (PL) spectra of InGaP/GaAs quantum wells (QWs) are used to characterize these interfaces. The conventional gas switching sequence, i.e., simultaneously switching on group‐III and ‐V gases, is found to provide only a broad peak at wavelengths longer than those of near‐band‐edge emissions from GaAs in the PL spectrum of.

Excitation dependent photoluminescence measurements of the nonradiative lifetime and quantum efficiency in GaAs S. Johnson,a D. Ding, J.-B. Wang, S.-Q. Yu, and Y.-H. Zhang Center for Solid State Electronics Research, Arizona State University, Tempe, Arizona the technique of photoluminescence (PL).

A laser is used to photoexcite electrons in a GaAs semiconductor and when they spontaneously de-excite they emit luminescence. The luminescence is analyzed with a spectrometer and th e peaks in the spectra represent a direct measure of.

Photoluminescence is an important technique for measuring the purity and crystalline quality of semiconductors. Using Time-resolved photoluminescence (TRPL) one can determine Photoluminescence from GaAs minority carrier lifetime of semiconductors like GaAs.

Can be used to. Refractive index of ion-implanted GaAs, J. Appl. Phys., 47, () Data [ Expressions for n ] [ CSV - comma separated ] [ TXT - tab separated ] [ Full database record ]. Photoluminescence measurements have been used to characterize Si‐doped GaAs layers, ranging in thickness from – μm, grown on Si() and misorientated Si() substrates by molecular beam epitaxy.

K PL spectra for GaAs/Si () show a strain‐induced splitting between the ZnGeP2 and ZnSiAs2 book and light hole valence bands which corresponds to a biaxial tensile stress of ± kbar acting. The band edge photoluminescence of GaAs structures has been studied as a ZnGeP2 and ZnSiAs2 book of greater than band edge excitation energies.

For p–p–n, GaAlAs–GaAs–GaAs, and p–n GaAs solar cell structures, it was found that the photoluminescent response curves were similar to the short circuit current response curves.

A computer simulation program was developed to extract information about. The near-infrared photoluminescence from single crystals of bulk ZnGeP 2 was studied as a function of excitation power, excitation wavelength, sample temperature, and polarization. The nature of this broad-band luminescence from large single crystals grown for nonlinear optical applications is established.

Two distinct bands with quite different polarization, power, and temperature behaviors. We report up-converted photoluminescence in a structure with InAs quantum dots embedded in GaAs.

An efficient emission from the GaAs barrier is observed with resonant excitation of both the dots and the wetting layer. The intensity of the up-converted luminescence is found to increase superlinearly with the excitation density.

The results suggest that the observed effect is due to a two-step. Results are presented on the photoluminescence (PL) spectra of ZnGeP2 crystals. The crystals have been grown by different methods, with charge composition varying from the stoichiometric one as. pores profile of porous GaAs/GaAs substrate M Ikram Md Taib et al-Study of intense photoluminescence from monodispersed -Ga2O3 ellipsoidal structures A.V.

Rodrigues and M.O. Orlandi-This content was downloaded from IP address on 04/07/ at Abstract. Photoluminescence measurements of ion-implanted GaAs were performed to investigate recovery of induced damages.

Silicon-doped n-type GaAs samples with () orientation were impIanted with Zn in a dose range of 5 x 10 to 5 x 10 ions/cm 2 and were subsequently annealed for 20 min at temperatures between °C and °C. A well-defined single emission peak due to Zn acceptor level. Materials Science and Engineering B57 () 62–70 Low temperature photoluminescence properties of Zn-doped GaAs M.K.

Hudait a,b,*, P. Modak b, K.S.R.K. Rao c, S.B. Krupanidhi a a Materials Research Centre, Indian Institute of Science, BangaloreIndia b Central Research Laboratory, Bharat Electronics, BangaloreIndia c Department of Physics, Indian Institute of Science. TRANSIENT PHOTOLUMINESCENCE SPECTROSCOPY OF GaAs, ZnSe AND GaAs/GaAlAs QUANTUM WELLS Sylvain CharbonneauUniversity of Ottawa,University of Ottawa, THESIS SUBMITTED IN PARTIAL FULFILLMENT OF THE REQUIREMENTS FOR THE DEGREE OF DOCTOR OF PHILOSOPHY.

Abstract. Photoluminescence and electrical measurements on Be-implanted GaAs and GaAs l-x P x (x ≃ ) indicate excellent impurity activation and lattice reordering after room temperature implantation and suitable annealing. From detailed luminescence measurements, the ionization energy of Be is estimated to be meV in GaAs and 35 ± 3 meV in GaAs P A study is made of the photoluminescence of epitaxial films of ZnSe on GaAs grown by the gas-transport technique in a flow of hydrogen at various epitaxy temperatures and times.

Excitation is by ultraviolet light with λex= nm. The photoluminescence spectra of films grown on GaAs and quartz are compared. It is shown that the position of the photoluminescence bands depends on the. Room‐temperature photoluminescence is used to investigate the basic recombination mechanisms in carbon‐doped GaAs samples, with hole concentrations ranging.

Photoluminescence properties of highly p +-doped GaAs 1−y Sb y are investigated. Band gap narrowing (BGN) effect is considered for heavily doped GaAs 1−y Sb y epilayers. Band-gap E g (GaAs 1−y Sb y)=y 2 −y+ is obtained through fitting band-gap energy obtained by PL spectra from 35 to K. Fermi level (E f) and full width at half maximum (FWHM) of photoluminescence.

Composition dependence of photoluminescence of GaAs 1−xBi x alloys Xianfeng Lu,1,a D. Beaton,1 R. Lewis,1 T. Tiedje,2 and Yong Zhang3 1Department of Physics and Astronomy, Advanced Materials and Process Engineering Laboratory, University of British Columbia, Vancouver, BC V6T 1Z4, Canada 2Department of Electrical and Computer Engineering, University of Victoria, Victoria.

To provide additional crystal structure data, as required for the predictions, we have refined the structural parameters of ZnGeP2 and ZnSiAs2 by the method of least squares with counter measured. Figure 5 shows the photoluminescence spectra obtained in the center of a platelet with different time windows.

The emission spectra are similar to that observed for bulk ZnGeP2 (Fig. 3) with one additional sharp emission peaked at eV. Materials Research Society Symposium Proceedings Vol. Figure 3: Time dependence of. Optical constants of Li (Lithium) Callcott and Arakawa n,k µm.

Carrington, P. J., et al. Long-wavelength photoluminescence from stacked layers of high-quality type-II GaSb/GaAs quantum rings.

Crystal Growth & Design, 13, – CrossRef Google Scholar. The electroreflectance spectra of Si, Ge, α-Sn, AlSb, GaP, GaAs, GaSb, InP, InAs, InSb, ZnO, ZnTe, CdS, CdSe, and CdTe are reported. The measurements were performed by the electrolyte technique. Optical constants of ZnGeP 2 (Zinc germanium phosphide, ZGP) Boyd et al.

n(o) µm; 20 °C. ZnSe layers have been grown by MBE by both compound source and separate source evaporation on ()GaAs substrates. Photoluminescence measurements on layers grown from a compound source showed the material to contain a high concentration of impurities and defects as indicated by the presence of large DA pair recombination and SA emission peaks in the PL spectra.

To study the mechanism of zinc diffusion in GaAs, we diffused zinc from a ZnAs2 source into Si-doped GaAs samples (n almost-equal-to X 10(18) cm-3) at different temperatures (from degrees-C up to degrees-C) in sealed evacuated quartz tubes. The samples are characterized by the depth profile of the photoluminescence at different temperatures.

Low Temperature Photoluminescence of ZnSe Strained Thin Layers Grown on GaAs by MBE p Computer Simulation of Interdiffusion Processes on II-VI Superlattices p MBE Growth and Properties of Si/GeSi Superlattices on Si () p The Pair-Doped Delta-Superlattice: An Inner Probe to Measure Monolayer Doping Fluctuations in.

Changing photoluminescence intensity from GaAs/AI,GaO.,As heterostructures upon chemisorption of SO2 J. Geisza) and T. Kuech Department of Chemical Engineering, University of Wisconsin-Madison, Madison, Wisconsin A.

Ellis Department of Chemist5 University of Wisconsin-Madison, Madison, Wisconsin Comments. Epitaxially grown Al film, dielectric constants for room temperature. References. Cheng, P.-H. Su, J. Choi, S. Gwo, X. Li, C.-K. Shih. Epitaxial growth of atomically smooth aluminum on silicon and its intrinsic optical properties, ACS N.

Book Page. Optical constants of Ir (Iridium) Roberts n,k µm. Wavelength: µm ( – ) Complex refractive index (n+ik) = = n k LogX LogY eV Derived optical constants = = = = = = = = Comments.

Solid iridium (Johnson Matthew): polycrystalline, annealed. n,k pairs measured by scanning automatic nulling spectro. FIG. Photoluminescence from a typical lattice-matched InGaAsN/GaAs layer at various temperatures. FIG. Variation of photoluminescence peak intensity with inverse tempera-ture (a) for both transitions, E1 and E2, in a %N alloy grown at °C, and (b) for the low-energys eVd transition, E1 in %N alloys grown.

For the case of ZnGeP2, a detailed investigation of the band structure, reveals that it has an indirect band gap rather than a pseudodirect one. The implications of this for the interpretation of. Abstract We present the results of our studies concerning temperature dependence of photoluminescence (PL) in Ga x In 1-x As 1- y N y /GaAs single quantum wells.

Our results at low temperatures indicate the presence of a high density of compositional and/or structural disorder and hence poor PL efficiency, common to as-grown GaInAsN material. Book, Internet Resource in ZnGeP2 --Fabrication of side-illuminated p-i-n Photodiode with waveguide layers C-SiC modulator for high-speed integrated photonics --Elevated Temperature Characteristics of Carbon-Doped GaInP/GaAs Heterojunction Bipolar Transistor Grown by Solid Source Molecular Beam Epitaxy --Analysis of Photoluminescence.Facile synthesis and step by step enhancement of blue photoluminescence from Ag-doped ZnS quantum dots Sonal Sahai1,2, Mushahid Husain2, Virendra Shanker1, Nahar Singh1 and D.

Haranath1,a) 1National Physical Laboratory, Council of Scientific and Industrial Research, Dr K S Krishnan Road, New Delhi –India.T1 - Near-field photoluminescence of Si-doped GaAs. AU - Eah, Sang Kee.

AU - Jhe, Wonho. AU - Saiki, Toshiharu. AU - Ohtsu, Motoichi. PY - /1/1. Y1 - /1/1. N2 - We have measured surface photoluminescence properties of Si-doped bulk GaAs using a near-field scanning optical microscope. An apertured fiber probe tip is used as an emitter of.

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